Understanding the Latch Effect: The "Time Bomb" in the circuit and a guide to protection
What is a latch(Latch-up)?
The parasitic thyristor (SCR) structure in CMOS technology is formed by interconnecting the parasitic NPN/PNP transistors of NMOS and PMOS. These parasitic transistors are normally turned off, but when subjected to voltage spikes, static interference or high temperatures, they trigger a positive feedback loop, causing the current to be amplified indefinitely inside the chip, eventually burning the chip or forcing the system to power down. This phenomenon is known as the latching effect.
CMOS structure (left) and its equivalent circuit (right)
How to quickly determine if a circuit has a latch?
The latch may be a problem if you encounter the following:
Sudden surge of current: the chip power consumption surges, far beyond the normal working current.
l voltage sudden plunge: the power supply voltage "cliff drop", resulting in chip reset or dysfunction.
High temperature is more likely to collapse: the chip is more likely to trigger the latch in a high temperature environment (such as >85℃).
Detection method:
l Electrostatic test: simulate human contact discharge to verify the anti-ESD capability of the chip (IEC 61000-4-2).
l Surge test: Simulate lightning strikes or power fluctuations to test circuit stability (IEC 61000-4-5).
Computer simulation: Use simulation tools (such as TCAD) to predict the trigger threshold of parasitic structures and optimize the design.
"Trigger threshold" and protection scheme of different devices:
|
器件类型 |
触发条件 |
防护建议 |
|
IGBT |
电流过大(如10A以上) |
1.串联限流电阻或保险丝;2.设计过流关断电路,触发时强制关断IGBT。 |
|
CMOS芯片(如单片机) |
I/O口对地电压异常(I/O口低于-1.8V或高于VCC+0.7V) |
1. I/O口串联200Ω电阻“限流”;2. 用TVS二极管箝位电压;3.热插拔时优先连接地线,避免电位差触发寄生晶体管! |
|
LDO(低压差稳压器) |
电流过载(如输入1.8V时达900mA) |
1. 串电阻“分流”;2. 加“复位开关”强制重启;3.选抗闩锁设计的稳压器。 |
|
运算放大器(如OPA4H199) |
输出短路或过载(如电流超120mA) |
1. 输出端加电阻“限流”;2. 用自恢复保险丝当“自动开关”。 |
Leiditech Electronics "anti-latch Arsenal"
1. High power interface: TVS diode + self-restoring fuse
TVS diode: nanosecond response, clamping voltage spikes to a safe threshold to prevent parasitic transistors from triggering.
Self-restoring fuse (PPTC) : automatically disconnect the circuit when overcurrent, and automatically reset after troubleshooting to avoid continuous damage. Together, they can block the latch trigger condition.

2. Low voltage/high speed interface: ESD ESD protection
Low-capacitance ESD devices: like an "anti-static jacket", wrap the chip interface to prevent electrostatic "shock" from triggering the latch, while not affecting the signal speed (such as USB, HDMI).
Leiditech recommended "anti-latch weapons" list, choose according to the scene, simple and effective, detailed program can pay attention to Lei MAO electronic public number or contact Leiditech EMC brother
|
类型 |
型号 |
描述 |
封装 |
应用 |
|
ESD |
ULC0524BLC |
5V,0.3/0.8PF,5A |
DFN2510P10 |
DP接口静电防护 |
|
ESD |
SDA1211CDN |
12V,Bi,8PF,8A |
DFN1006 |
12V电源接口防静电 |
|
ESD |
SD24C |
24V,Bi,50PF,12A |
SOD-323 |
CAN接口静电防护 |
|
ESD |
SMC24 |
24V,Bi,30PF,9A |
SOT-23 |
CAN接口静电防护 |
|
ESD |
ESDA05CP |
5V Bi, 10PF,5A |
DFN1006-2 |
GPIO静电保护 |
|
ESD |
SDA05W5 |
5V,Uni,30PF,3A |
SOT-353 |
GPIO静电保护 |
|
ESD |
ULC332010T8 |
3.3V,1.5PF,30A |
DFN2010-8 |
千兆网防静电 |
|
ESD |
GBLC03C |
3.3V,Bi,0.6 PF,20A |
SOD-323 |
千兆网防静电 |
|
ESD |
SLVU2.8-4 |
2.8V,Bi,2 PF,30A |
SOP-08 |
千兆网防静电 |
|
ESD |
USRV05-4 |
5V,Uni,0.7PF,5A |
SOT-26 |
SD卡静电防护 |
|
ESD |
ULC3304P10 |
3.3V,Uni, 0.4PF,5A |
DFN2510P10 |
HDMI 2.0静电保护 |
|
ESD |
SR05W |
5V,Uni,3PF,20A |
SOT-143 |
USB2.0 静电保护 |
|
ESD |
LC0502D6 |
5V,0.8PF,6A |
SOT-26 |
USB2.0静电防护 |
|
ESD |
ULC05DT3 |
5V,Uni,0.6PF,4A |
SOT-23 |
eSATA静电保护 |
|
ESD |
ULC0568K |
5V,0.3PF,5A |
DFN4120-10 |
USB3.0静电保护 |
|
ESD |
ULC0502P3 |
5V,Uni,0.6PF,5A |
DFN1006-3 |
USB3.0 静电保护 |
|
ESD |
ULC0524P |
5V,Uni,0.3PF,5A |
DFN2510P10 |
USB3.0静电保护 |
|
ESD |
SMC12 |
12V,Bi,45PF,15A |
SOT-23 |
I2C接口静电保护 |
|
ESD |
ULC0504P |
5V,0.4PF,5A |
DFN1616-6 |
TF卡静电保护 |
|
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