Understanding the Latch Effect: The "Time Bomb" in the circuit and a guide to protection
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By LEIDITECH | 25 March 2025 | 0 Comments

Understanding the Latch Effect: The "Time Bomb" in the circuit and a guide to protection

What is a latch(Latch-up)?

The parasitic thyristor (SCR) structure in CMOS technology is formed by interconnecting the parasitic NPN/PNP transistors of NMOS and PMOS. These parasitic transistors are normally turned off, but when subjected to voltage spikes, static interference or high temperatures, they trigger a positive feedback loop, causing the current to be amplified indefinitely inside the chip, eventually burning the chip or forcing the system to power down. This phenomenon is known as the latching effect.

CMOS structure (left) and its equivalent circuit (right)

How to quickly determine if a circuit has a latch?

The latch may be a problem if you encounter the following:

 

Sudden surge of current: the chip power consumption surges, far beyond the normal working current.

 

l voltage sudden plunge: the power supply voltage "cliff drop", resulting in chip reset or dysfunction.

 

High temperature is more likely to collapse: the chip is more likely to trigger the latch in a high temperature environment (such as >85℃).

Detection method:

l Electrostatic test: simulate human contact discharge to verify the anti-ESD capability of the chip (IEC 61000-4-2).

l Surge test: Simulate lightning strikes or power fluctuations to test circuit stability (IEC 61000-4-5).

Computer simulation: Use simulation tools (such as TCAD) to predict the trigger threshold of parasitic structures and optimize the design.

"Trigger threshold" and protection scheme of different devices

器件类型

触发条件

防护建议

IGBT

电流过大(如10A以上)

1.串联限流电阻或保险丝2.设计过流关断电路,触发时强制关断IGBT。

CMOS芯片(如单片机)

I/O口对地电压异常(I/O口低于-1.8V或高于VCC+0.7V)

1. I/O口串联200Ω电阻“限流”;2. 用TVS二极管箝位电压;3.热插拔时优先连接地线,避免电位差触发寄生晶体管!

LDO(低压差稳压器)

电流过载(如输入1.8V时达900mA)

1. 串电阻“分流”;2. 加“复位开关”强制重启;3.选抗闩锁设计的稳压器。

运算放大器(如OPA4H199)

输出短路或过载(如电流超120mA)

1. 输出端加电阻“限流”;2. 用自恢复保险丝当“自动开关”。

Leiditech Electronics "anti-latch Arsenal"

1. High power interface: TVS diode + self-restoring fuse

TVS diode: nanosecond response, clamping voltage spikes to a safe threshold to prevent parasitic transistors from triggering.

Self-restoring fuse (PPTC) : automatically disconnect the circuit when overcurrent, and automatically reset after troubleshooting to avoid continuous damage. Together, they can block the latch trigger condition.


2. Low voltage/high speed interface: ESD ESD protection

Low-capacitance ESD devices: like an "anti-static jacket", wrap the chip interface to prevent electrostatic "shock" from triggering the latch, while not affecting the signal speed (such as USB, HDMI).

Leiditech recommended "anti-latch weapons" list, choose according to the scene, simple and effective, detailed program can pay attention to Lei MAO electronic public number or contact Leiditech EMC brother

类型

型号

描述

封装

应用

ESD

ULC0524BLC

5V,0.3/0.8PF,5A

DFN2510P10

DP接口静电防护

ESD

SDA1211CDN

12V,Bi,8PF,8A

DFN1006

12V电源接口防静电

ESD

SD24C

24V,Bi,50PF,12A

SOD-323

CAN接口静电防护

ESD

SMC24

24V,Bi,30PF,9A

SOT-23

CAN接口静电防护

ESD

ESDA05CP

5V Bi, 10PF,5A

DFN1006-2

GPIO静电保护

ESD

SDA05W5

5V,Uni,30PF,3A

SOT-353

GPIO静电保护

ESD

ULC332010T8

3.3V,1.5PF,30A

DFN2010-8

千兆网防静电

ESD

GBLC03C

3.3V,Bi,0.6 PF,20A

SOD-323

千兆网防静电

ESD

SLVU2.8-4

2.8V,Bi,2 PF,30A

SOP-08

千兆网防静电

ESD

USRV05-4

5V,Uni,0.7PF,5A

SOT-26

SD卡静电防护

ESD

ULC3304P10

3.3V,Uni, 0.4PF,5A

DFN2510P10

HDMI 2.0静电保护

ESD

SR05W

5V,Uni,3PF,20A

SOT-143

USB2.0 静电保护

ESD

LC0502D6

5V,0.8PF,6A

SOT-26

USB2.0静电防护

ESD

ULC05DT3

5V,Uni,0.6PF,4A

SOT-23

eSATA静电保护

ESD

ULC0568K

5V,0.3PF,5A

DFN4120-10

USB3.0静电保护

ESD

ULC0502P3

5V,Uni,0.6PF,5A

DFN1006-3

USB3.0 静电保护

ESD

ULC0524P

5V,Uni,0.3PF,5A

DFN2510P10

USB3.0静电保护

ESD

SMC12

12V,Bi,45PF,15A

SOT-23

I2C接口静电保护

ESD

ULC0504P

5V,0.4PF,5A

DFN1616-6

TF卡静电保护

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