Industry applications
8.1 GaN Electrostatic Surge Protection Solution
Background: Gallium Nitride (GaN) does not inherently possess the capability to absorb transient surges. During circuit switching transients and lightning-induced surges, the overcurrent and overvoltage must not exceed the rated capacity of the GaN device.
Advantages of the Solution: A TVS (Transient Voltage Suppression) diode placed at the primary side of a fly back power transformer can effectively absorb the energy of overvoltage spikes generated by FET switching transients. It reacts quickly, exhibits low clamping voltage, and is controllable.
In this solution, the PTVS160AF single component is utilized for protection. This device boasts high power handling capabilities, a small form factor, and saves space in the circuit design.
