power protection
19.1碳化硅SIC新能源 汽车充电桩
Application Background: Electric vehicle charging requires high power, high DC voltage, large capacity, rapid charging of high-voltage batteries, high reliability, high efficiency, and minimal heat generation. Therefore, a component with low loss, fast speed, and high power is needed. Leiditech Silicon Carbide (SiC) diodes and SiC MOSFETs can be applied in critical circuits of EV chargers such as PFC and full-bridge LLC, improving power factor and enhancing system efficiency and reliability.
Solution Advantages: Leiditech SiC diodes feature fast reverse recovery time, high voltage rating, and extremely low switching losses. Leiditech SiC MOSFETs switch rapidly, achieve high voltage ratings with high currents, high efficiency, high power density, small and light modules, and lower costs.
However, when SiC MOSFETs switch rapidly, voltage spikes can occur across the device due to the effect of internal parasitic capacitance and circuit parasitic inductance. These spikes can far exceed the maximum rated voltage of the SiC MOSFET, leading to device damage or performance degradation.
To address the issue of voltage spikes during SiC MOSFET switching, Leiditech connects a TVS diode in parallel with the SiC MOSFET's drain and source. When a voltage spike occurs, the TVS diode quickly turns on to absorb the spike energy, protecting the SiC MOSFET from damage.
Shanghai Leiditech Electronics, as a professional electronic component supplier, provides SiC MOSFETs and protection solutions/devices for addressing voltage spikes during SiC MOSFET switching.The specific TVS model selection is based on the SiC MOSFET's Vdss voltage: Most SiC MOSFETs have a Vdss above 600V, so the following list of TVS models requires two devices to be connected in series. For detailed solution selection, please consult Shanghai Leiditech's experienced EMC engineer.
